Name: Guo Weiling
Current Professional Societies
Director of China Illuminating Engineering Society（CIES）;
Deputy editor in chief of " China Illuminating Engineering Journal "
Light emitting diode, Micro LED and laser diode;
Reliability of semiconductor devices;
GaN based power devices and the IC driver
2011 First Advancement Awards of Outstanding Project in Science and Technology in Beijing city government, China
2001 Fourth Originator of A National Invention named “High Brightness And High Efficiency Tunnel Junction Connected LED”;
Second Advancement Awards of Outstanding Project in Science and Technology in Beijing City government, China.
1998 Outstanding Youth Lecturer of Beijing, China
1996 Second Advancement Awards of Outstanding Project in Science and Technology in Beijing city government, China
1995 Second Advancement Awards of Outstanding Project in Science and Technology in electrical ministry, China
WEILING GUO,JIANPENG TAI,JIANPENG LIU, JIE SUN.Process Optimization of Passive Matrix GaN-Based Micro-LED Arrays for Display Applications [J]. J ELECTRON MATER,2019.(SCI)
Fangzhu Xiong,Weiling Guo,Shiwei Feng,Xuan Li, Zaifa Du, Le Wang,Jun Deng, and Jie Sun，Transfer-Free Graphene-Like Thin Films on GaN LED Epiwafers Grown by PECVD Using an Ultrathin Pt Catalyst for Transparent Electrode，materials：2019, 12(21), 3533，SCIFan X, Guo W L, Sun J. Reliability of High-voltage GaN Based Light-emitting Diodes[J]. IEEE Transactions on Device and Materials Reliability, 2019. (SCI）)
Fan X, Sun J, Guo W L, Ke X X, Yan C L, Li X J, Dong Y B, Xiong F Z, Fu Y F, Wang L, Deng J and Xu C. Chemical Vapor Deposition on Refractory Metals: The Attempt of Growth at much Higher Temperature[J]. Synthetic Metals, 2019, 247: 233-239. (SCI)
Guo W L; Deng, J; Wang, JL; Wang, L; Tai, JP，GaN-based light emitting diode with graphene/indium antimony oxide composite transparent electrode，ACTA PHYSICA SINICA 2019.68（24）；247303-1-247303-6(SCI)
Guo Weiling,Ma Qijing,Du Shuai,Lin Tianyu,Zhu Yanxu，Simulation Study on Current Collapse Effect of E GaN HEMT，16th China International Forum on Solid State Lighting&2019 International Forum on Wide Bandgap Semicondutors，November 25-27,2019 Shenzhen,China，P202-201909151329：p51 （EI）
Weiling Guo,Tianyu Lin, Liang Lei,Shuai Du,Qijing Ma,Yanxu Zhu，Under voltage lockout circuit design for enhanced GaN HEMT drive，2019 IEEE 3rd International Conference on Electronic Information Technology and Computer Engineering，P671 (EI)
Prof. Weiling Guo is currently a Professor and the Deputy Director of the Optoelectronics Technology Lab of the Ministry of Education in Beijing University of Technology. She received her Bachelor’s Degree from Tianjin University, and M.S. and Ph.D. degrees from Beijing University of Technology. She used to be an Assistant Researcher in The University of Hong Kong from 1999 to 2000. Her research work has focused on the multi active layer laser diode; GaN related devices such as GaN LED, GaN microLED display, and GaN power devices; Graphene grown by CVD and its application on LED. She has undertaken more than 30 national, provincial, ministerial and enterprise scientific research projects，has over 90 publications, 20+ patents granted and one book published.