Hu Dongqing

                   

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Personal profile

GenderFemale

DegreesPh.D.

Title: Associate Professor

E-mail: hudongqing@bjut.edu.cn

Research Areas:

Power Semiconductor Device and Power IC

Publications

1.*Hu,Dongqing;Zhang,Jingwei;Jia,Yunpeng;Wu,Yu;Peng, Ling;Tang, Yun “Impact of Different Gate Biases on Irradiation and Annealing Responses of SiC MOSFETs” IEEE Transactions on Electron Devices, V 65, n 9,P 3719-3724,September 2018

2.Peng,Ling;*Hu,Dongqing;Jia, Yunpeng;Wu, Yu;An, Pengzhen;Jia, Guo “Analysis on the Rapid Recovery of Irradiated VDMOSFETs by the Positive High Electric Field Stress” IEEE Transactions on Nuclear Science,V 64, n 10,P 2633-2638,October 2017

3.*Hu, Dongqing Han, Baodong;Xie, Shushan;Jia, Yunpeng;Kang, Baowei “Effect of proton irradiation dose on the gettering efficiency of platinum and the performance of local lifetime-controlled power diodes” Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers,V 46, n 2,P 566-568,Febrary 8, 2007

4.*Hu, Dongqing;Zhang, Jingwei;Jia, Yunpeng;Wu, Yu;”Radiation and annealing effects of SiC MOSFETs at high voltage gate bias” 2018 20th European Conference on Power Electronics and Applications

5.*Hu,Dongqing, Wu, Yu;Kang, Baowei;You, Xuelan;Cheng, Xu;Sin, Johnny K. O. “A new internal transparent collector IGB”, Proceedings of the International Symposium on Power Semiconductor Devices and ICs,p 287-290,2009

6.*Hu, Dongqing;Sin, Johnny K. O.;Kang, Baowei;Cheng, Xu;Wu, Yu;Xie, Shushan “Lifetime control of power fast recovery diode with low emitter efficiency anode” IEEE Annual Power Electronics Specialists Conference,p 991-994,2007,PESC 07

7.*Hu, Dongqing;Tang, Yun;Jia, Yunpeng; Wu, Yu;” Effect of P-Type island on SEE failure in n-MOSFET”, 2018 20th European Conference on Power Electronics and Applications

8.Xie, Shushan;*Hu, Dongqing;Kang, Baowei;”Lifetime control of power fast recovery diode”; Research and Progress of Solid State Electronics V 28, n 1,p 20-23+32,March 2008

9.Wang, Hao;*Hu, Dongqing;Wu, Yu;Zhou, Wending;Kang, Baowei, “New structural IGBT - An internal transparent collector IGBT and its simulation” Chinese Journal of Semiconductors, V 29, n 2,p 348-351,February 2008

10.*Hu, Dongqing;Wu, Yu;Jia, Yunpeng;Kang, Baowei;Cheng, Xu;”Modeling for internal transparent collector IGBT” IEEE 6th International Power Electronics and Motion Control Conference, IPEMC '09,p 281-284,2009

Personal Statement

Hu DongqingAssociate Professor and Master Student Supervisor, is a faculty member in the College of Microelectronics in Faculty of Information Technology in Beijing University of Technology. She has been engaged in teaching for 26 years. She has presided over and participated in about thirty projects, including National Natural Science Foundation of China projects, Financial Defense Projects, Entrusted projects from enterprises and institutions, and so on. She has published about thirty papers indexed by SCI, EI and ISTP on major journals and conferences.