Cui Bifeng

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Personal profile



Title:Associate Professor, Vice Dean

Research Areas:

Semiconductor laser(EBL or VCSEL) design and fabrication、3D packaging technology for semiconductor device、Semiconductor material and device detection technology


“The Novel high Performance Light-Emitting Diode Material and Devices, got the First Prize of Beijing Scientific and Technological Progress Award --2010


[1] Cui Bifeng , Wang Yang , Fang Tianxiao “Study on Electronic Blocking Layer of 403 nm GaN-based Vertical Cavity Surface Emitting Lasers” Optoelectronics Letters 2019, 15(6): 411-414

[2] Fang Tianxiao,Cui,Bifeng "The Simulation of Thermal Characteristics of 980 nm Vertical Cavity Surface Emitting Lasers" Journal of Semiconductors Vol.39, No.2,024001

[3] L. Kong,H. L. Wang,D. Bajek,S. E. White,A. F. Forrest,X. L. Wang,B. F. Cui,J. Q. Pan,Y.Ding,and M. A. Cataluna,Deep-red semiconductor monolithic mode-locked lasers,Applied PhysicsLetters,2014,105(105):2221115-1-2221115-4。

[4] Houlei Wang,Liang Kong,Adam Forrest,David Bajek,Stephanie E.Haggett,Xiaoling Wang,Bifeng Cui,Jiaoqing Pan,Ying Ding,Maria Ana Cataluna,Ultrashort Pulse Generation by Semiconductormode-locked Lasers at 760nm,Optical Express,2014,22(21):25940-25946

[5] Effects of Substrate Temperature and Ion Source Energy on Stress of Thin Film, Laser & Optoelectronics Progress,55,093101(2018)

[6] The Simulation of Thermal Characteristics of 980nm Vertical Cavity Surface Emitting Lasers, Journal of Semiconductors,39,2 024001(2018)

[7] Study on Static Electric Shoke Failure of GaAs Based High Power Laser Laser & Infrared 47,6,699(2017)

[8] Study of electrode Optimization of Oxide Aperture Confined Vertical-Cavity Surface-emitting laser, Laser & Optoelectronics Progress,54,101402(2017)

[9] Stable Coupling Efficiency of Semiconductor Lasers with Groove Structure ,Chinese Journal of Luminescence 38,5,637(2017)