Deng Jinxiang

Personal profile

NameDeng Jinxiang




Research Areas

Semiconductor materials and devices


(1)“High temperature dependence of the cubic phase content and optical properties of BN thin films”,Surface & Coatings Technology,203 (2009) 1220–1224

(2)“Nanocrystalline silicon quantum dots thin films prepared by magnetron reaction sputtering”,Proc. of SPIE, 7381(2009)738113

(3)“Optical properties of hexagonal boron nitride thin films deposited by radio frequency bias magnetron sputtering”, Chinese Physics B, 18(2009)4013-4018

(4)“The growth of cubic boron nitride films on the interlayer of nickel by RF sputter”, Proc. SPIE 7658, 76582R (2010);

(5)“Preparation of C60 Thin Film and Investigation of its Optical Properties ”, Advanced Materials Research, 194-196(2011)2317

(6)“Deposition and electrical characteristics of S-doped boron nitride thin films”, Vacuum,86 (2011) 48

(7)“Thermal modeling and the optimized design of metal plate cooling systems for single concentrator solar cells”, Chinese Physics B, 21(2012) 034216

(8)“Electrical properties of sulfur-implanted cubic boron nitride thin film”,Chinese Physics B,21(2012) 047202

(9)“Investigation on AZO Films Deposited by Radio-frequency Reactive Magnetron Sputtering”, Applied Mechanics and Materials, 320(2012)35-39

(10)“Fabrication and temperature dependence of a GaInP/GaAs/Ge tandem solar cell”, Journal of Semiconductors, 33(2), 024006 1-4, 2012.

(11)“Thermal modeling optimization and experimental validation for a single concentrator solar cell system with heat sinks”, Chinese Physics B, 22(8), 084208 1-6, 2013

(12)“Deposition of hexagonal boron nitride thin films on silver nanoparticle substrates and surface enhanced infrared absorption”, Chin. Phys. B Vol. 23, No. 4 (2014) 047104

(13)” Ellipsometric study and application of rubrene thin film in organic Schottky diode”, Applied Surface Science, 2016, 388: 396-400.

(14)” Structural and optical properties of Nb-dopedb-Ga2O3 thin films deposited by RF magnetron sputtering”, Vacuum 146 (2017) 93-96

(15)” Effects of annealing and Nb doping on the electrical properties of p-Si/n-β-Ga2O3:Nb heterojunction”, Journal of Materials Science: Materials in Electronics (2018) 29:19028-19033

Personal Statement

He obtained his Bachelor’s Degree of Science in Physics from Nankai University in 1985, obtained his Master’s Degree in Engineering in Electronic Devices from Institute of Electronics, Chinese Academy of Science in 1997, and obtained his Ph.D. in Condensed Physics from Beijing University of Technology in 2001. He did research and taught in Faculty of Science in BJUT since 1993.