Research Areas

1.semiconductor devices and integrated circuits;

2.semiconductor photoelectronic devices and OEIC

Publications

1.Xian-Cheng Liu,Hong-YunXie*, Liang Chen et al. Effects of Buride oxide layer on working speed of SiGe heterojunction photo-transistor. Chin. Phys. B, 2020, 29(2):028501-1-028501-5.

2.Xiancheng Liu, Hongyun Xie* et al. A Low Energy Consumption Passive RF

Activation Circuit with Stable Output. The 3rd International Conference on Integrated Circuits and Microsystems (ICICM2018), November 24-26, 2018, Shanghai, China.

1. RuiLiu,Hong-YunXie*, Liang Chen et al. An novel SiGe heterojunction phototransistor detector based on silicon-on-insulator substrate. The IEEE 14th International Conference on Solid-State and Integrated Circuit Technology(ICSICT 2018), October 31-November 3, 2018, Qingdao, China.

2. Pei Ma,Hong-YunXie*, Liang Chen et al. Influence of base structural parameters on responsivity and characteristic frequency of SiGe Heterojunction Phototransistor. The IEEE 14th International Conference on Solid-State and Integrated Circuit Technology(ICSICT 2018), October 31-November 3, 2018, Qingdao, China.

3. Hongyun Xie*, JiahuiWuet al. Modeling and Analysis of an Uni-traveling Carrier Hertero-Jucntion Phototransistor. 2017 International Conference on Circuits, System and Simulation (ICCSS 2017), July 14-17, 2017, London, UK.

4. Hongyun Xie*, Shuo Liu, Lianghao Zhang, Zhiyun Jiang,YanxiaoZhao, Liang Chen andWanrongZhang, Low power dissipation SiGe HBT dual-band variable gain amplifier, Microelectronics Journal, 2015, 46(7):626-631

5. Jiang Zhiyun, Xie Hongyun*, Zhang Lianghao, ZhangWanrong,Hu Ruixin, HuoWenjuan,Analysis on high speed response of a uni-traveling-carrier double hetero- junction phototransistor, Chinese Physics B , 2015, 24(4), 048504-1-048504-5

6. Zhiyun Jiang, Hongyun Xie*,WanrongZhang, Lianghao Zhang, High-frequency InP-InGaAsP Heterojunction Phototransistor Employing a UTC structure, Key Engineering Materials, 2015, 645:1105-1110

7. WenjuanHuo, Song Liang*, Can Zhang, ShaoyangTan,Liangshun Han, Hongyun Xie*, Fabrication and characterization of deep ridge InGaAsP/InP light emitting transistors, Optics Express, 2014, 22(1): 1806-1814

Personal Statement

Xie Hongyun, Associate Professor and Master Student Supervisor, is a faculty member of the College of Microelectronics intheFaculty of Information, Beijing University of Technology. She has been engaged in teaching for 14 years. She has presided over one National Natural Science Foundation of China project and two Natural Science Foundation of Beijing projects. She has published about 40 papers indexed by SCI, EI and ISTP on major journals and conference.