Current Professional Societies:

IEEE Member

Research Areas:

Semiconductor Devices Reliability Physics

Honors:

Second Prize of Technical Invention of CIE

Publications:

1. Bangbing. Shi, Shiwei. Feng,Yanmin Zhang*, et al. Junction Temperature Measurement Method for SiC Bipolar Junction Transistor Using Base-Collector Voltage Drop at Low Current.IEEE Transactions on Power Electronics. 2019, 33(6):5274-5282.

2. Xiang Zheng, Shiwei Feng, andYanmin Zhang*, et al. Evidence of GaN HEMT Schottky Gate Degradation After Gamma Irradiation,IEEE Transactions on Electron Devices, 2019, 66 (9):3784-3788.

3. Xiang Zheng, Shiwei Feng, andYanmin Zhang*, et al.Identifying the Traps in the Channel Region in GaN-Based HEMTs Using a Nonmonotone Drain Current Transient,IEEE Transactions on Device and Materials Reliability, 2019, 19 (3):509-513.

4. Xiang Zheng, Shiwei Feng, andYanmin Zhang*, et al. A voltage-transient method for characterizing traps in GaN HEMTs,Microelectronics Reliability, 2019. 93: 57-60.

5. Xiang Zheng, Shiwei Feng, andYanmin Zhang*, et al. Effect of two-dimensional electron gas on horizontal heat transfer in AlGaN/AlN/GaN heterojunction transistors,Solid-State Electronics, 2018. 147: 35-38

6. Xiang Zheng, Shiwei Feng, Yanmin Zhang*, et al. Evaluation of the Schottky Contact Degradation on the Temperature Transient Measurements in GaN HEMTs.IEEE Transactions on Electron Devices, 2018, 65(5):1734-1738.

7. Xiang Zheng, Shiwei Feng, andYanmin Zhang*, et al. A New Differential Amplitude Spectrum for Analyzing the Trapping Effect in GaN HEMTs Based on the Drain Current Transient[J].IEEE Transactions on Electron Devices, 2017, 64(4): 1498-1504.

8. Siyu Zhang, Shiwei Feng, andYanmin Zhang*, et al. Monitoring of early catastrophic optical damage in laser diodes based on facet reflectivity measurement[J].Applied Physics Letters, 2017, 110(22): 223503.

9. Yamin Zhang, Shiwei Feng*, Hui Zhu, et al. Study of Heat Transport Behavior in GaN-Based Transistors by Schottky Characteristics Method[J].IEEE Transactions on Electron Devices, 2017, 64(5): 2166-2171.

10. Yamin Zhang, Shiwei Feng*, Li Wang, et al. Measuring temperature in GaN-based high electron mobility transistors using cathodoluminescence spectroscopy.Semiconductor Science & Technology, 2015, 30(5):055016.

11. Yamin Zhang, Shiwei Feng*, Hui Zhu, et al. Effect of Self-heating on the Drain Current Transient Response in AlGaN/GaN HEMTs,IEEE Electron Device Letters, 2014, 35:345.

12. Yamin Zhang, Shiwei Feng*, and Hui Zhu, et al. Determining Drain Current Characteristics and Channel Temperature Rise in GaN HEMTs.IEEE Transactions on Devices & Material Reliability, 2014, 14: 978.

13. Yamin Zhang, Shiwei Feng*, Hui Zhu, et al. Assessment of pulse conditions effects on reliability in GaN-based high electron mobility transistors by transient temperature measurements.Journal of Applied Physics, 2013, 114(9):094516.

14. Yamin Zhang, Shiwei Feng*, and Hui Zhu, et al., Two-dimensional transient simulations of the self-heating effects in GaN-based HEMTs.Microelectronics Reliability, 2013, 53(5):694-700.