þ Doctoral supervisor
þ Master Supervisor
Current Professional Societies
1. Beijing deputy director of the Optical Society Youth Council;
2. Guest Editor of Symmetry, Engineering Reports and Frontiers in Materials;
3. Reviewer ofSCIJournals.
Research Areas
1. Spintronic devices;
2. Magnetic semiconductors;
3. Resistive switching;
4. Molecular spintronics;
5. Transition metal ferromagnets;
6. Novel two-dimensional electronics.
Honors
1. The Advisor of Outstanding Master's Degree Thesis (2021);
2. Youth Promotion Association of Chinese Academy of Sciences (2018);
3. Research Tuition Scholarship (2011 and 2012);
4. The outstanding Academic Performance Award (2012 and 2013);
5. ExcellentGraduationThesis (2010).
Publications
(first/corresponding author)
1. X. L. Wang*, Z. X. Shang, C. Zhang, et al. Electrical and magnetic anisotropies in van der Waals multiferroic CuCrP2S6, Nat. Commun.14, 840 (2023).
2. X. A. Jiang, X. Y. Wang*, X. L. Wang*, et al. Manipulation of Current Rectification in Van der Waals Ferroionic CuInP2S6, Nat. Commun.13, 574 (2022).
3. L. F. Li, X. Zhang,et al., X. L. Wang* and C. D. Wang*, Manipulation of Electron Spins with Oxygen Vacancy on Amorphous/Crystalline Composite-Type Catalyst, ACS Nano18, 1214 (2024).
4. X. L. Wang*, C. Zhang, H. L. Wang, et al. Exploring the metal-insulator transition in (Ga,Mn) As by molecular absorption, Nano Letters, 22, 9190 (2022).
5. X. L. Wang, H. L. Wang, D. Pan,et al.Robust Manipulation of Magnetism in Dilute Magnetic Semiconductor (Ga,Mn) As by Organic Molecules, Adv. Mater. 27, 8043 (2015).
6. X. L. Wang, H. L. Wang*, J. L. Ma, et al. Efficiently rotating the magnetization vector in a magnetic semiconductor via organic molecules, ACS Appl. Mater. & Interfaces 11 (6), 6615 (2019).
7. Q. Q. Yang, Z. Z. Zhang, X. A. Jiang, X. L. Wang*, et al. Realization of High Spin Injection Through Chiral Molecules and Its Application in Logic Device, IEEE Electron Device Lett. 43, 1862 (2022).
8. Z. X. Shang, T. H. Liu, Q. Q. Yang, S. N. Cui, K. L. Xu, Y. Zhang, J. X. Deng, T. R. Zhai, X. L. Wang*, Chira-Molecule-Based Spintronic Devices, Small18, 2203015 (2022).
9. Y. Zhang, G. C. Wang, F. Y. Liu, Z. X. Shang, Q. Q. Yang, T. R. Zhai, X. L. Wang*, Chirality detection of biological molecule through spin selectivity effect, J. Chem. Phys.159, 114703 (2023).
10. X. L. Wang*, S. N. Cui, M. Y. Yang*, et al. Tuning crystal orientation and chiral spin order in Mn3Ge by annealing process and ion implantation, Nanotechnology 34, 315702 (2023).
11. X. L. Wang*, S. N. Cui, Q. Q. Yang*, et al. Investigating the strain controlled epitaxial growth of Mn3Ge films through thickness modulation, Appl. Surf. Sci. 602, 154247(2022).
12. X. L. Wang*, D. Pan, Q. Q. Zeng,et al.Robust anomalous Hall effect and temperaturedriven Lifshitz transition in Weyl semimetal Mn3Ge, Nanoscale 13, 2601 (2021).
13. X. L. Wang*, C. Zhang, Q. Q. Yang, et al. Manipulation of crystalline structure, magnetic performance, and topological feature in Mn3Ge films, APL Mater. 9, 111107 (2021).
14. D. Su, T. R. Zhai*, K. Ge, S. Zhang, Z. Y. Xu, J. H. Tong, H. Z. Li, S. J. Sun, Y. Zhang and X. L. Wang,* WGM lasing in irregular cavities with arbitrary boundaries, Nanoscale 13, 18349 (2021).
15. X. L. Wang*, X. P. Sun, S. N. Cui, et al. Physical Investigations on Bias-Free, Photo-Induced Hall Sensors Based on Pt/GaAs and Pt/Si Schottky Junctions, Sensors 21, 3009 (2021).
16. X. L. Wang,* X. P. Sun, T. R. Zhai, et al. A bias-free, lateral effect position sensor photo-detector, Sens. Actuators A Phys.330, 112846 (2021).
17. T. R. Zhai,* L. Han, X. J. Ma and X. L. Wang,* Low-Threshold Microlasers Based on Holographic Dual-Gratings, Nanomaterials 11, 1530 (2021).
18. Y. Yuan*, et al.and X. L. Wang,* The Al Doping Effect on Epitaxial (In,Mn) As Dilute Magnetic Semiconductors Prepared by Ion Implantation and Pulsed Laser Melting, Materials 14, 4138 (2021).
19. X. L. Wang, Q. Shao, A. Zhuravlyova, M. He, Y. Yi, R. Lortz, J. N. Wang, and A. Ruotolo*, Giant negative magnetoresistance in Manganese-substituted Zinc Oxide, Sci. Rep. 5, 9221 (2015).
20. X. L. Wang, Q. Shao, P. S. Ku, and A. Ruotolo*, A memristive diode for neuromorphic computing, Microelec. Eng.138, 7 (2015).
21. X. L. Wang, Q. Shao, C. W. Leung, R. Lortz, and A. Ruotolo*, Non-volatile, electric control of magnetism in Mn-substituted ZnO, Appl. Phys. Lett.104, 062409 (2014).
22. X. L. Wang, A. Di Bernardo, et al.Giant triplet proximity effect in superconducting pseudo spin-valves with engineered anisotropy, Phys. Rev. B (Rapid Commun.) 89, 140508 (R) (2014).
23. X. L. Wang, C. Y. Luan, Q. Shao, et al. Effect of the magnetic order on the room-temperature band-gap of Mn-doped ZnO thin films, Appl. Phys. Lett.102, 102112 (2013).
24. X. L. Wang, P. S. Ku, Q. Shao,et al.Magnetism as a probe of the origin of memristive switching in p-type antiferromagnetic NiO, Appl. Phys. Lett.103, 223508 (2013).
25. X. L. Wang, Q. Shao, C. W. Leung, and A. Ruotolo*, Non-volatile, reversible switching of the magnetic moment in Mn-doped ZnO films, J. Appl. Phys.113, 17C301 (2013).
26. X. L. Wang, K. H. Lai and A. Ruotolo*, A comparative study on the ferromagnetic properties of undoped and Mn-doped ZnO, J. Alloys. Compd. 542, 147 (2012).
27. X. L. Wang, H. Y. Shi, X. W. Yan, et al. Microstructure and superconductivity of Ir-doped BaFe2As2 superconductor, Appl. Phys. Lett. 96, 012507 (2010).
28. J. Xu, Z. X. Shang, Z. P. Hou,* and Xiaolei Wang*,Exploring the crucial influence on the electrical rectification of ZnO films, Surf. Interfaces 31, 102014 (2022).
29. Y. Gu#, X. L. Wang#, M. Humayun, et al. Spin regulation on (Co,Ni)Se2/C@FeOOH hollow nanocage accelerates water oxidation, Chinese Journal of Catalysis 43, 839-850(2021).
Personal Statement
Xiaolei Wang preceeded her Ph.D degree at City University of Hong Kong, and then went to University of Cambridge as a visitor. After Ph.D graduation in 2013, she joined Institute of Semiconductors, Chinese Academy of Sciences as an assistant professor. In 2019, she moved to Beijing University of Technology as an associate professor. Over the past years, she has been engaged in the physical property manipulation and device investigation of non-volatile storage materials for a long time. She has achieved the following innovative results: (1) The new functions of single-phase ferrous memristor materials have been exploited, such as stress sensing, frequency regulation and space-time resolution, etc.The storage window is 6 times higher than traditional flash. The energy consumption of the device is one-thousandth of CMOS. (2) The interface passivation technology has been developed. Organic molecules are used to induce the metal-insulator phase transition in semiconductors. The problem of conductance mismatch at organic/semiconductor interface has been solved, and the 98% spin injection efficiency has been achieved. At the same time, the magnetic properties have been greatly manipulated, which is more than twice of the highest record by electric field modulation. (3) Through the design of atomic occupancy, the precise regulation of crystal structure, topological property and spin orientation is realized in antiferromagnetic materials. The carrier concentration changes by more than one order of magnitude, and the anisotropic magnetoresistance effect increases by 5 times. She has published 65 academic papers, with 1046 citations and 3 papers cited more than 100 times. There are 29 first/corresponding author papers, including Nat. Commun. (2 articles), and Adv. Mater., Nano Lett.,etc. She has presided two projects of Surface project (NSFC) and Talent Special Project of the Chinese Academy of Sciences, etc. This project intends to utilize antiferromagnetic spintronics to achieve universal, rapid and sensitive chiral detection of biological molecules.
