Research Areas:

Semiconductor laser(EBL or VCSEL) design and fabrication、3D packaging technology for semiconductor device、Semiconductor material and device detection technology

Honors:

“The Novel high Performance Light-Emitting Diode Material and Devices, got the First Prize of Beijing Scientific and Technological Progress Award --2010

Publications:

[1] Cui Bifeng , Wang Yang , Fang Tianxiao et.al “Study on Electronic Blocking Layer of 403 nm GaN-based Vertical Cavity Surface Emitting Lasers” Optoelectronics Letters 2019, 15(6): 411-414

[2] Fang Tianxiao,Cui,Bifeng et.al "The Simulation of Thermal Characteristics of 980 nm Vertical Cavity Surface Emitting Lasers" Journal of Semiconductors Vol.39, No.2,024001

[3] L. Kong，H. L. Wang，D. Bajek，S. E. White，A. F. Forrest，X. L. Wang，B. F. Cui，J. Q. Pan，Y.Ding，and M. A. Cataluna，Deep-red semiconductor monolithic mode-locked lasers，Applied PhysicsLetters，2014，105（105）：2221115-1-2221115-4。

[4] Houlei Wang，Liang Kong，Adam Forrest，David Bajek，Stephanie E.Haggett，Xiaoling Wang，Bifeng Cui，Jiaoqing Pan，Ying Ding，Maria Ana Cataluna，Ultrashort Pulse Generation by Semiconductormode-locked Lasers at 760nm，Optical Express，2014，22（21）：25940-25946

[5] Effects of Substrate Temperature and Ion Source Energy on Stress of Thin Film, Laser & Optoelectronics Progress,55,093101(2018)

[6] The Simulation of Thermal Characteristics of 980nm Vertical Cavity Surface Emitting Lasers, Journal of Semiconductors,39,2 024001(2018)

[7] Study on Static Electric Shoke Failure of GaAs Based High Power Laser Laser & Infrared 47,6,699(2017)

[8] Study of electrode Optimization of Oxide Aperture Confined Vertical-Cavity Surface-emitting laser, Laser & Optoelectronics Progress,54,101402(2017)

[9] Stable Coupling Efficiency of Semiconductor Lasers with Groove Structure ,Chinese Journal of Luminescence 38,5,637(2017)